On the go with SONOS
Top Cited Papers
- 1 July 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Circuits and Devices Magazine
- Vol. 16 (4), 22-31
- https://doi.org/10.1109/101.857747
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide filmsJournal of Applied Physics, 1999
- A new SONOS memory using source-side injection for programmingIEEE Electron Device Letters, 1998
- A low voltage SONOS nonvolatile semiconductor memory technologyIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, 1997
- High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory applicationIEEE Electron Device Letters, 1995
- Scaling of multidielectric nonvolatile SONOS memory structuresSolid-State Electronics, 1994
- Yield and reliability of MNOS EEPROM productsIEEE Journal of Solid-State Circuits, 1989
- Characterization of charge injection and trapping in scaled SONOS/MONOS memory devicesSolid-State Electronics, 1987
- Characterization of thin-oxide MNOS memory transistorsIEEE Transactions on Electron Devices, 1972