Characterization of thermally nitrided silicon dioxide
- 1 November 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (9), 816-818
- https://doi.org/10.1063/1.93698
Abstract
Characterization of low pressure (LP) thermal oxide films grown on Si(100) substrate and thermally nitrided LP oxide films were conducted by glancing angle backscattering with channeling. Film stoichiometry and the SiO2/Si interface properties were investigated by MeV He+ ion beams. LP oxide films exhibited stoichiometric SiO2 composition with one to two monolayers of nonregistered Si atoms at the interface. After thermal nitridation of these LP oxide films at 925 and 950 °C for 2 h, thin (oxy)-nitride layers on the oxide surface were observed. Also an additional one to two monolayers of nonregistered Si atoms were observed at the interface after the thermal nitridation. There were no observable changes in bulk stoichiometry of the LP oxide films after the thermal nitridation at 925 and 950 °C for 2 h.Keywords
This publication has 12 references indexed in Scilit:
- Advantages of thermal nitride and nitroxide gate films in VLSI processIEEE Transactions on Electron Devices, 1982
- A Backscattering-Channeling Study of Thermally Grown Nitride Films on SiliconJapanese Journal of Applied Physics, 1982
- Characterization of low-pressure chemical-vapor-deposited and thermally-grown silicon nitride filmsJournal of Applied Physics, 1982
- Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS CharacteristicsJournal of the Electrochemical Society, 1982
- (100) and (110) SiSiO2 interface studies by MeV ion backscatteringSurface Science, 1980
- Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia GasJournal of the Electrochemical Society, 1980
- The Growth and Characterization of Very Thin Silicon Dioxide FilmsJournal of the Electrochemical Society, 1980
- Studies of the Si-SiO2 interface by MeV ion channelingApplied Physics Letters, 1979
- Temperature dependence of Pt(111) surface relaxationSurface Science, 1978
- Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiInterfacePhysical Review Letters, 1978