Analysis on the Wave Confinement in the GaxAl1-xAs-GaAs Laser Diode
- 1 August 1970
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 9 (8)
- https://doi.org/10.1143/jjap.9.1013
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2Applied Physics Letters, 1970
- GaAs junction lasers containing the amphoteric dopants Ge and SiSolid-State Electronics, 1970
- Gain Factor and Loss in a GaxAl1-xAs-GaAs Laser DiodeJapanese Journal of Applied Physics, 1970
- Photon loss in the active and passive regions of a semiconductor laserSolid-State Electronics, 1969
- A low-threshold room-temperature injection laserIEEE Journal of Quantum Electronics, 1969
- Mode confinement and gain in junction lasersIEEE Journal of Quantum Electronics, 1965