On the pinhole model for MIS diodes
- 30 November 1981
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (11), 1075-1076
- https://doi.org/10.1016/0038-1101(81)90138-6
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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- Optical Properties of the Interface between Si and Its Thermally Grown OxidePhysical Review Letters, 1979
- Electrical characteristics of GaAs MIS Schottky diodesSolid-State Electronics, 1979
- A note on the evaluation of Schottky diode parameters in the presence of an interfacial layerElectronics Letters, 1978
- Photovoltaic properties of MIS-Schottky barriersSolid-State Electronics, 1977
- Theory of metal-insulator-semiconductor solar cellsJournal of Applied Physics, 1977
- Outline and comparison of the possible effects present in a metal–thin–film–insulator–semiconductorJournal of Applied Physics, 1976
- The role of the interfacial layer in metal−semiconductor solar cellsJournal of Applied Physics, 1975
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. ExperimentSolid-State Electronics, 1974