Optical Properties of the Interface between Si and Its Thermally Grown Oxide
- 1 October 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 43 (14), 1046-1050
- https://doi.org/10.1103/physrevlett.43.1046
Abstract
The in situ optical properties of the interface between Si and its thermally grown oxide, deduced over the spectral region between the visible and the near-ultraviolet by analysis of spectroscopic ellipsometric data, are characteristic of a (7±2)-Å region of atomically mixed Si and O of average stoichiometry Si. The results are incompatible with either microroughness or an abrupt transition from Si to Si, but rather support a graded transition region.
Keywords
This publication has 8 references indexed in Scilit:
- Auger analysis of ultrathin SiO2 layers on siliconJournal of Applied Physics, 1979
- Optical Evidence for a Silicon‐Silicon Oxide InterlayerJournal of the Electrochemical Society, 1979
- Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiInterfacePhysical Review Letters, 1978
- The Optical Constants of Silicon and Dry Oxygen Oxides of Silicon at 5461AJournal of the Electrochemical Society, 1978
- Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimetersReview of Scientific Instruments, 1978
- Über die bestimmung der optischen konstanten dünnster oberflächenschichten und das problem der schichtdickeSurface Science, 1977
- Interspecimen Comparison of the Refractive Index of Fused Silica*,†Journal of the Optical Society of America, 1965
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935