Impact Ionization of Donors in Semiconductors as a Tool for Photoluminescence Investigations
- 1 February 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (2), 447-450
- https://doi.org/10.1063/1.1661136
Abstract
Impact ionization of impurities can serve as a tool for investigations of radiative recombination mechanisms in semiconductors. Additional information can be obtained on the degree of compensation. The effectiveness of the method is demonstrated for n‐type GaAs. Four different bands are proved to be caused by donor‐acceptor transitions. The degree of compensation is found to be high in our samples.Keywords
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