AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (12), 565-567
- https://doi.org/10.1109/55.43141
Abstract
Low-temperature AlInAs buffer layers incorporated in AlInAs-GaInAs HEMT epitaxial layers grown by MBE are discussed. A growth temperature of 150 degrees C followed by a short anneal is shown to eliminate kinks in the device I-V characteristic and sidegating and to reduce the output conductance dramatically.Keywords
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