High-performance submicrometer AlInAs-GaInAs HEMT's
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (1), 41-43
- https://doi.org/10.1109/55.20407
Abstract
The performance of long (1.3- mu m) and short (0.3- mu m) gate-length Al/sub 0.48/In/sub 0.52/ As-Ga/sub 0.47/In/sub 0.53/ high-electron-mobility transistors (HEMTs) is reported. Transconductances of 465 and 650 mS/mm, respectively, were achieved. The 0.3- mu m-long gate-length device exhibited an f/sub t/>80 GHz. These results are attributed to the excellent electronic properties of the AlInAs-GaInAs modulation-doped system.Keywords
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