Structutral and electrical properties of silicon-based amorphous alloys
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 1027-1034
- https://doi.org/10.1016/0022-3093(87)90247-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloysApplied Physics Letters, 1987
- Hydrogen evolution from a-Si:C:H and a-Si:Ge:H alloysJournal of Non-Crystalline Solids, 1985
- Electron spin resonance (ESR and LESR) studies in a-Si1−xGex:HJournal of Non-Crystalline Solids, 1985
- Evidence for graphitic-type bonding in glow discharge hydrogenated amorphous silicon carbon alloysJournal of Applied Physics, 1985
- The role of hydrogen in a-Si:H — results of evolution and annealing studiesJournal of Non-Crystalline Solids, 1983
- Hydrogen evolution and defect creation in amorphous Si: H alloysPhysical Review B, 1979
- A SIMS analysis of deuterium diffusion in hydrogenated amorphous siliconApplied Physics Letters, 1978
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977