Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloys
- 9 February 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (6), 335-337
- https://doi.org/10.1063/1.98192
Abstract
We introduce a parameter obtained from infrared measurements as a means of quantifying the amount of amorphous silicon microstructure and its degree of passivation by hydrogen. Using this parameter, the photoconductivities of amorphous silicon (a‐Si:H), amorphous silicon carbon (a‐SiC:H), and amorphous silicon germanium (a‐SiGe:H) fall on the same curve. We discuss the relevance of these results with regard to material quality.Keywords
This publication has 17 references indexed in Scilit:
- Hydrogen evolution from a-Si:C:H and a-Si:Ge:H alloysJournal of Non-Crystalline Solids, 1985
- Urbach tail and gap states in hydrogenated a-SiC and a-SiGe alloysSolid State Communications, 1985
- Evidence for graphitic-type bonding in glow discharge hydrogenated amorphous silicon carbon alloysJournal of Applied Physics, 1985
- Structural, electrical, and optical properties of a-:H and an inferred electronic band structurePhysical Review B, 1985
- Bonding and Release of Hydrogen in a-Si:C:H AlloysMRS Proceedings, 1985
- An Assessment of a-SiGe:H Alloys with a Band GaP of 1.5Ev as to their Suitability for Solar Cell ApplicationsMRS Proceedings, 1985
- Reinterpretation of the silicon-hydrogen stretch frequencies in amorphous siliconSolid State Communications, 1983
- Vibrational Spectra of Hydrogen in Silicon and GermaniumPhysica Status Solidi (b), 1983
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982
- Infrared Spectrum and Structure of Hydrogenated Amorphous SiliconPhysica Status Solidi (b), 1980