Distribution of Boron-Induced Defects in Shallow Diffused Surface Layers of Silicon
- 1 June 1966
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (7), 2862-2866
- https://doi.org/10.1063/1.1782140
Abstract
Chemical sectioning of p-type surface layers on silicon is described. The technique is applied to measure the impurity concentration and the defect concentration vs depth in shallow boron-diffused surface layers using electrical measurements and x-ray diffraction microscopy.Keywords
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