Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing
- 1 December 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (11), 906-908
- https://doi.org/10.1063/1.92602
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAsApplied Physics Letters, 1981
- An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targetsJournal of Applied Physics, 1980
- Low-temperature redistribution of Cr in boron-implanted GaAs in the absence of encapsulant stressApplied Physics Letters, 1980
- Annealing of damage and redistribution of Cr in boron-implanted Si3N4-capped GaAsApplied Physics Letters, 1980
- Incorporation of boron during the growth of GaAs single crystalsApplied Physics Letters, 1980