Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs
- 1 April 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (7), 559-561
- https://doi.org/10.1063/1.92412
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Low-temperature redistribution of Cr in boron-implanted GaAs in the absence of encapsulant stressApplied Physics Letters, 1980
- Annealing of damage and redistribution of Cr in boron-implanted Si3N4-capped GaAsApplied Physics Letters, 1980
- Low-temperature gettering of Cr in GaAsApplied Physics Letters, 1980
- Redistribution of Cr in Capless-Annealed GaAs under Arsenic PressureJapanese Journal of Applied Physics, 1980
- Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAsIEEE Electron Device Letters, 1980
- Implantation of shallow impurities in Cr-doped semi-insulating GaAsApplied Physics Letters, 1979
- Alloying of Au layers and redistribution of Cr in GaAsApplied Physics Letters, 1979
- Redistribution of Cr during annealing of 80Se-implanted GaAsApplied Physics Letters, 1979
- Back surface gettering and Cr out-diffusion in VPE GaAs layersApplied Physics Letters, 1979
- Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulantApplied Physics Letters, 1979