Kinetics of silicide formation by thin films of V on Si and SiO2 substrates
- 1 August 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (8), 3304-3308
- https://doi.org/10.1063/1.1663776
Abstract
The reaction rate of vacuum‐evaporated films of V of the order of 1000 Å thick is investigated by MeV He backscattering spectrometry. On substrates of single‐crystal Si and for anneal times up to several hours in the temperature range 570–650°C, VSi2 is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significantly decelerate the reaction. On substrates of SiO2 in the temperature range 730–820°C and anneal times of several hours or less, V3Si is formed at a square‐root rate in time. The activation energy of this process is 2.0±0.2 eV.Keywords
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