High-resistivity LPE layers of GaAs by iron doping
- 16 December 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 62 (2), 673-679
- https://doi.org/10.1002/pssa.2210620240
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Growth of Semi‐Insulating LPE GaAs for FET Buffer LayersJournal of the Electrochemical Society, 1978
- Iron-Doped Liquid-Phase-Epitaxial GaAs Layers with Negative Resistance PropertiesJapanese Journal of Applied Physics, 1977
- Liquid Phase Epitaxial Growth of Semi‐insulating GaAs CrystalsJournal of the Electrochemical Society, 1977
- Hole traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Mixed conduction in Cr-doped GaAsJournal of Physics and Chemistry of Solids, 1975
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- High resistivity layers of GaAs grown by liquid phase epitaxyApplied Physics A, 1975
- Arseniure de gallium dope au chrome obtenu par epitaxie en phase liquideMaterials Research Bulletin, 1969
- The activation energies of chromium, iron and nickel in gallium arsenideJournal of Physics D: Applied Physics, 1968
- Energy-Level Model for High-Resistivity Gallium ArsenideNature, 1961