Carbon doping characteristics of GaAs and Al0.3Ga0.7As grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4
- 1 August 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 141 (3-4), 324-330
- https://doi.org/10.1016/0022-0248(94)90233-x
Abstract
No abstract availableKeywords
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