Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
- 1 November 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (1-2), 167-173
- https://doi.org/10.1016/0022-0248(89)90196-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 16 references indexed in Scilit:
- Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Controlled carbon doping of GaAs by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Elementary process of the thermal decomposition of alkyl galliumJournal of Crystal Growth, 1988
- Kinetic simulation of gas phase reactions in MOVPE growthJournal of Crystal Growth, 1988
- Abrupt p-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxyApplied Physics Letters, 1987
- On the Reaction Mechanism of the Pyrolyses of TMG and TEG in MOCVD Growth ReactorsJapanese Journal of Applied Physics, 1987
- Surface morphology of GaAs grown by gas-source MBE using trimethylgallium and arsenicJournal of Crystal Growth, 1986
- Intentional ρ-type doping by carbon in metalorganic MBE of GaAsJournal of Electronic Materials, 1986
- A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAsJournal of Crystal Growth, 1986
- Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium SourcesJapanese Journal of Applied Physics, 1985