Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET'sIEEE Transactions on Electron Devices, 1990