Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (6), 1496-1503
- https://doi.org/10.1109/16.106245
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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