Multilevel Information Storage in Ferroelectric Polymer Memories
- 5 August 2011
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 23 (36), 4146-4151
- https://doi.org/10.1002/adma.201101511
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire TransistorNano Letters, 2010
- Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °CAdvanced Functional Materials, 2010
- Organic Nonvolatile Memory Devices Based on FerroelectricityAdvanced Materials, 2010
- High‐Mobility Nonvolatile Memory Thin‐Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene ChannelsAdvanced Materials, 2009
- Multibit Storage of Organic Thin‐Film Field‐Effect TransistorsAdvanced Materials, 2009
- Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectricOrganic Electronics, 2008
- Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memoriesNature Materials, 2008
- Localized Pressure‐Induced Ferroelectric Pattern Arrays of Semicrystalline Poly(vinylidene fluoride) by MicroimprintingAdvanced Materials, 2007
- High-performance solution-processed polymer ferroelectric field-effect transistorsNature Materials, 2005
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004