STUDY OF FAILURE MECHANISMS IN Al–Cu THIN FILMS BY HIGH-VOLTAGE ELECTRON MICROSCOPY

Abstract

Al‐4% Cu thin‐film stripes have been examined by high‐voltage electron microscopy after being powered to failure. Particular emphasis was given to the study of damage sites in order to get a better understanding of the mechanisms responsible for mass depletion. It was found that these mechanisms were the same as have been reported for pure Al films, namely, structural damage at mixed grain‐size interfaces and at triple points in regions having a uniform grain‐size distribution.