A study of ZnTe films grown on glass substrates using an atomic layer evaporation method
- 1 February 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 65 (3), 301-307
- https://doi.org/10.1016/0040-6090(80)90240-0
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Molecular beam epitaxial writing of patterned GaAs epilayer structuresApplied Physics Letters, 1978
- Studies of bulk and surface states of cubic II–VI semiconductors using synchrotron radiationIl Nuovo Cimento B (1971-1996), 1977
- Molecular beam epitaxial ZnTe thin filmsElectrical Engineering in Japan, 1977
- Molecular beam epitaxial GaAs layers for MESFET’sApplied Physics Letters, 1976
- Continuous room-temperature operation of GaAs-AlxGa1−xAs double-heterostructure lasers prepared by molecular-beam epitaxyApplied Physics Letters, 1976
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Structures Grown by Molecular Beam EpitaxyJournal of Vacuum Science and Technology, 1973
- Film Deposition by Molecular-Beam TechniquesJournal of Vacuum Science and Technology, 1971
- Energy Band Structures of Cubic ZnS, ZnSe, ZnTe, and CdTe (Korringa‐Kohn‐Rostoker Method)Physica Status Solidi (b), 1967
- Formation of Phosphor Films by EvaporationJournal of the Electrochemical Society, 1960