Effect of barrier layers on BaTiO3 thin film capacitors on Si substrates
- 1 January 1994
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (1), 53-56
- https://doi.org/10.1007/bf02651267
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Development and fabrication of RuO2 thin film resistorsMaterials Science and Engineering B, 1993
- BaTiO3 thin film capacitors deposited by r.f. magnetron sputteringThin Solid Films, 1992
- Examination of barrier layers for lead zirconate titanate thin filmsJournal of Electronic Materials, 1992
- High-Performance barium titanate capacitors with double layer structureJournal of Electronic Materials, 1991
- Reactively sputtered RuO2 thin film resistor with near zero temperature coefficient of resistanceThin Solid Films, 1991
- Barrier layers for realization of high capacitance density in SrTiO3 thin-film capacitor on siliconApplied Physics Letters, 1990
- Fabrication of BaTiO3films by RF planar-magnetron sputteringFerroelectrics, 1981
- Ru and RuO2 as Electrical Contact Materials: Preparation and Environmental InteractionsJournal of the Electrochemical Society, 1979
- Characteristics of RF sputtered barium titanate thin filmsProceedings of the IEEE, 1971
- Preparation of Thin BaTiO3 Films by dc Diode SputteringJournal of Applied Physics, 1970