The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPE
- 1 September 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (9A), L1628-1630
- https://doi.org/10.1143/jjap.28.l1628
Abstract
We investigated the surface morphology and impurity incorporation for ZnSe epitaxial layers grown on GaAs substrates by MOVPE under light irradiation of different intensities. The surface morphology tends to become rough with increasing irradiation intensity. The incorporation of residual-donor impurities, probably chlorine from the source material of dimethylzinc, is also enhanced with irradiation intensity. The optimum growth conditions for obtaining high-quality layers at acceptable growth rates are presented.Keywords
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