EPITAXIAL GROWTH OF NICKEL SILICIDE LAYERS ON SILICON BY ELECTRON BEAM ANNEALING
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Epitaxial growth of Pd2Si films on Si(111) substrates by scanning electron-beam annealingApplied Physics Letters, 1982
- Epitaxial NiSi2 formation by pulsed ion beam annealingApplied Physics Letters, 1982
- Titanium and nickel silicide formation after Q-switched laser and multiscanning electron beam irradiationJournal of Applied Physics, 1982
- Ion beam mixing at nickel-silicon interfacesJournal of Applied Physics, 1982
- Orientation effects on doping profiles in gallium arsenide implanted with seleniumJournal of Applied Physics, 1981
- Metal Silicon Reactions Induced by CW Scanned Laser and Electron BeamsJournal of the Electrochemical Society, 1981
- Ion-beam-induced silicide formationApplied Physics Letters, 1979
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978