Epitaxial growth of Pd2Si films on Si(111) substrates by scanning electron-beam annealing

Abstract

Pd₂Si films were grown epitaxially onto Si(111) substrates by scanning electron‐beam annealing of deposited Pd films. Single phase silicide formation and epitaxial growth were studied by Nomarski optical microscopy, x‐ray diffraction analysis, and Rutherford backscattering and channeling techniques. The crystalline quality of the electron‐beam‐annealed Pd₂Si films was weakly dependent on annealing conditions and somewhat worse than that of furnace‐annealed films.