Temperature dependence of electron mobility in GaAs−AlxGa1−xAs heterostructures from 1 to 10 K

Abstract

We report the temperature dependence of the channel resistance in three high-mobility $\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}-{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ heterostructures between 1 and 10 K. We find the temperature-dependent part of the resistance to increase linearly with the temperature for the highest-mobility sample and to decrease sublinearly for the lower-mobility samples. The channel mobility of the highest-mobility sample increases with density following $\mu \sim n^{1.65}$, implying that impurity scattering is the dominant scattering mechanism.