Photovoltaic characteristics of phosphorus-doped amorphous carbon films grown by r.f. plasma-enhanced CVD
- 28 August 2006
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 90 (18-19), 3214-3222
- https://doi.org/10.1016/j.solmat.2006.06.017
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar CellsJapanese Journal of Applied Physics, 2003
- Nitrogen doping and structural properties of amorphous carbon films deposited by pulsed laser ablationApplied Surface Science, 2002
- Boron-doped diamond-like amorphous carbon as photovoltaic films in solar cellSolar Energy Materials and Solar Cells, 2001
- Low density of defect states in hydrogenated amorphous carbon thin films grown by plasma-enhanced chemical vapor depositionApplied Physics Letters, 2001
- Studies of phosphorus doped diamond-like carbon filmsDiamond and Related Materials, 2000
- Theory of dopant pairs in four-fold coordinated amorphous semiconductorsJournal of Non-Crystalline Solids, 1998
- Photovoltaic cell of carbonaceous film/n-type siliconApplied Physics Letters, 1996
- Electronic and atomic structure of amorphous carbonPhysical Review B, 1987
- Optical Properties and Electronic Structure of Amorphous GermaniumPhysica Status Solidi (b), 1966