Interferometric measurements of electric field-induced displacements in piezoelectric thin films
- 1 May 1996
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 67 (5), 1935-1941
- https://doi.org/10.1063/1.1147000
Abstract
Interferometric measurements of electric field‐induced displacements in piezoelectric thin films using single‐beam and double‐beam optical detection schemes are reported. It is shown that vibrational response measured with a single‐beam interferometer includes a large contribution of the bending motion of substrate. Therefore, it is difficult to apply single‐beam technique for piezoelectric measurements in thin films. To suppress the bending effect a high‐resolution double‐beam interferometer is proposed. The sensitivity of the interferometer is significantly improved in comparison with previously reported system. The interferometer is shown to resolve small displacements without using a lock‐in technique. An example of the interferometric capabilities is demonstrated with experimental results on electric field, frequency, and time dependences of piezoelectric response for quartz and Pb(Zr,Ti)O3 thin film.Keywords
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