Application of real-time low-energy ion scattering spectroscopy to heterointerface formation processes of molecular beam epitaxially grown III–V compound semiconductors
- 1 March 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 85 (1-4), 404-413
- https://doi.org/10.1016/0168-583x(94)95854-8
Abstract
No abstract availableKeywords
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