The effect of As/Ga flux ratio on the photoluminescent spectra from molecular beam epitaxially-grown Sn-doped AlxGa1−xAs

Abstract

It is shown that the As/Ga flux ratio γ_f during molecular beam epitaxial growth has significant effects on the photoluminescent (PL) spectra at 5.5 K from a Sn‐doped Al_xGa_1−x As (x∼0.27–0.33) layer. At any growth temperature T_s samples grown under low γ_f have higher PL intensity than those grown under high γ_f . Based on the 5.5‐K PL spectra we arrive at the important conclusion that the highest‐quality Al_xGa_1−xAs is grown under conditions of high T_s and low γ_f , followed by layers grown at high T_s and high γ_f, and at low T_s and low γ_f , with the poorest‐quality layers grown under conditions of low T_s and high γ_f. The present results are consistent with the fact that low‐threshold double‐heterostructure lasers are obtained only when T_s is high.