On the physics and modeling of small semiconductor devices—I
- 30 June 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (6), 519-530
- https://doi.org/10.1016/0038-1101(80)90033-7
Abstract
No abstract availableKeywords
This publication has 56 references indexed in Scilit:
- High field collision rates in polar semiconductorsSolid-State Electronics, 1978
- Electric field dependence of the positions and amplitudes of magnetophonon oscillations in n-InSb at 77 KSolid-State Electronics, 1978
- Hot electron quantum magneto-transportSolid-State Electronics, 1978
- Hot electron transport effects in field effect transistorsSolid-State Electronics, 1978
- Hot-electron relaxation effects in devicesSolid-State Electronics, 1978
- Calculation of hot electron phenomenaSolid-State Electronics, 1978
- EpilogueSolid-State Electronics, 1978
- High-field electronic conduction in insulatorsSolid-State Electronics, 1978
- Transport of hot carriers in semiconductor quantized inversion layersSolid-State Electronics, 1978
- The influence of interelectronic collisions on conduction and breakdown in polar crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1958