PSEUDO-KIKUCHI PATTERN DEGRADATION BY A THIN AMORPHOUS SILICON FILM
- 15 December 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (12), 389-391
- https://doi.org/10.1063/1.1652871
Abstract
Measurements are reported which show that a few tens of angstroms of an amorphous adlayer of silicon on a single‐crystal (111) silicon surface produces a measurable degradation in the pseudo‐Kikuchi backscattered electron pattern of this surface. Normalized pattern quality, as defined in this work, is shown to decrease rapidly with adlayer film thickness and to become effectively zero at 350 Å for a primary electron beam accelerating voltage of 21.3 kV. At 5 kV, the normalized pattern quality was effectively zero for all measurable film thicknesses (thickness measurement limit was ∼20 ± 20 Å).Keywords
This publication has 6 references indexed in Scilit:
- ELECTRON BEAM CHANNELING IN SINGLE-CRYSTAL SILICON BY SCANNING ELECTRON MICROSCOPYApplied Physics Letters, 1969
- Selected area channelling patterns in the scanning electron microscopeJournal of Materials Science, 1969
- MOVING MASK GROWTH OF SINGLE-CRYSTAL SILICON FILMS ON AMORPHOUS QUARTZ SUBSTRATESApplied Physics Letters, 1968
- Improvements in the Orientation Effect Observed by Scanning Electron MicroscopyPhysica Status Solidi (b), 1968
- Kikuchi-like reflection patterns obtained with the scanning electron microscopePhilosophical Magazine, 1967
- Further Applications of Kikuchi Diffraction Patterns; Kikuchi MapsJournal of Applied Physics, 1966