Photoluminescence determination of the nitrogen doping concentration in 6H-SiC
- 7 November 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (19), 2457-2459
- https://doi.org/10.1063/1.112706
Abstract
The intensity of impurity and intrinsic luminescence lines reflects the impurity doping concentration. A calibration procedure is presented for the nitrogen impurity in 6H–SiC. The calibration is valid for a large range of n‐type doping from 1014 to 1016 cm−3. Effects of excitation density, temperature during the photoluminescence experiments as well as the observation of acceptor related lines are discussed.Keywords
This publication has 10 references indexed in Scilit:
- Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiCApplied Physics Letters, 1993
- Excitonic recombination radiation in undoped and boron-doped chemical-vapor-deposited diamondsPhysical Review B, 1993
- Growth mechanism of 6H-SiC in step-controlled epitaxyJournal of Applied Physics, 1993
- The influence of impurity concentration on exciton photoluminescence in GaAs and InPSemiconductor Science and Technology, 1992
- Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbideJournal of Applied Physics, 1992
- Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafersApplied Physics Letters, 1990
- Calibration of the photoluminescence technique for measuring B, P and Al concentrations in Si in the range 1012to 1015cm-3using Fourier transform spectroscopySemiconductor Science and Technology, 1987
- Determination of boron and phosphorus concentration in silicon by photoluminescence analysisApplied Physics Letters, 1978
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978
- Exciton Recombination Radiation and Phonon Spectrum ofSiCPhysical Review B, 1962