Melting of silicon crystals and a possible origin of swirl defects
- 1 August 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 39 (2), 328-340
- https://doi.org/10.1016/0022-0248(77)90282-2
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Effect of low cooling rates on swirls and striations in dislocation-free silicon crystalsJournal of Crystal Growth, 1976
- The formation of interstitial swirl defects in dislocation-free floating-zone silicon crystalsJournal of Crystal Growth, 1976
- Topographic observation of micro defects (e.g.`swirls') in nearly perfect crystalsJournal of Applied Crystallography, 1976
- Quantitative Analysis of Microsegregation in Silicon Grown by the Czochralski MethodJournal of the Electrochemical Society, 1976
- Technique for the video display of X-ray topographic images and its application to the study of crystal growthJournal of Crystal Growth, 1974
- Recent observations on „swirl defects” in dislocation-free siliconPhysica Status Solidi (a), 1973
- X-Ray Topography with Chromatic-Aberration CorrectionJournal of Applied Physics, 1971
- The Elimination of Vacancy-Cluster Formation in Dislocation-Free Silicon CrystalsJournal of the Electrochemical Society, 1971
- Etch Pits Observed in Dislocation-Free Silicon CrystalsJapanese Journal of Applied Physics, 1966
- Thermal Conductivity of Silicon and Germanium from 3°K to the Melting PointPhysical Review B, 1964