A re-examination of boundary layer theory for a horizontal CVD reactor
- 1 November 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 69 (2-3), 619-622
- https://doi.org/10.1016/0022-0248(84)90375-0
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- A Mathematical Model of the Coupled Fluid Mechanics and Chemical Kinetics in a Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1984
- Phenomenological Model of the CVD Epitaxial ReactorJournal of the Electrochemical Society, 1982
- Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference HolographyJournal of the Electrochemical Society, 1982
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- Application of the finite element method to mass transport limited epitaxial growth processJournal of Crystal Growth, 1971
- The epitaxial growth of silicon in horizontal reactors†International Journal of Electronics, 1968
- The Effects of Gas Pressure and Velocity on Epitaxial Silicon Deposition by the Hydrogen Reduction of Chlorosilanes†International Journal of Electronics, 1967