An accurate mobility model for the I–V characteristics of n-channel enhancement-mode MOSFETs with single-channel boron implantation
- 31 December 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (12), 1271-1278
- https://doi.org/10.1016/0038-1101(85)90053-x
Abstract
No abstract availableKeywords
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