Deuterium in germanium: Interaction with point defects
- 15 March 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (6), 1464-1471
- https://doi.org/10.1063/1.333402
Abstract
Electrical measurements on deuterium plasma-treated germanium samples containing deep level recombination centers show significant neutralization of these defects to depths of ∼80 μm. Chemical measurement of the deuterium profile after similar plasma treatment shows apparent incorporation depths of ∼0.2 μm. We discuss experiments which resolve this discrepancy, and show that hydrogen diffusion into the bulk of the germanium is responsible for the observed neutralization.Keywords
This publication has 26 references indexed in Scilit:
- Hydrogen passivation of deep metal-related donor centers in germaniumJournal of Applied Physics, 1983
- Hydrogen passivation of gold-related deep levels in siliconPhysical Review B, 1982
- Deuterium passivation of grain-boundary dangling bonds in silicon thin filmsApplied Physics Letters, 1982
- Hydrogen passivation of copper-related defects in germaniumApplied Physics Letters, 1982
- Hydrogen in amorphous siliconNuclear Instruments and Methods, 1981
- Hydrogen passivation of point defects in siliconApplied Physics Letters, 1980
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979
- Hydrogenation of evaporated amorphous silicon films by plasma treatmentApplied Physics Letters, 1978
- Photoluminescence of hydrogenated amorphous siliconApplied Physics Letters, 1977
- Substitutional doping of amorphous siliconSolid State Communications, 1975