Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition
- 15 March 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (6), 2777-2783
- https://doi.org/10.1063/1.363961
Abstract
Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for bulk ceramics. Textured thin-film capacitors with a columnar microstructure show lower switching voltages than epitaxial films. No thickness dependence of Ec and a good endurance up to 1011 cycles have been observed for epitaxial as well as textured capacitors with oxidic electrodes. In contrast, capacitors with a metallic top electrode show an increase of Ec with decreasing thickness of the ferroelectric layer. We show that charge injection can explain the experimentally observed increase of Ec with decreasing ferroelectric layer thickness. An overview is given of the growth conditions needed for PbZr0.53Ti0.47O3 films, because the precise stoichiometry is of the utmost importance for the capacitor quality.Keywords
This publication has 24 references indexed in Scilit:
- Fatigue, rejuvenation and self-restoring in ferroelectric thin filmsIntegrated Ferroelectrics, 1995
- Ferroelectric thin film technology for semiconductor memorySemiconductor Science and Technology, 1995
- Mechanisms for the operation of thin film transistors on ferroelectricsIntegrated Ferroelectrics, 1995
- Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3 thin films of varying thickness: Blocking layer modelJournal of Applied Physics, 1994
- Synthesis of Lead Titanate: Thermodynamic Modeling and Experimental VerificationJournal of the American Ceramic Society, 1993
- Fatigue of ferroelectric PbZrxTiyO3 capacitors with Ru and RuOx electrodesJournal of Materials Research, 1993
- Theory of conduction and breakdown in perovskite thin filmsIntegrated Ferroelectrics, 1992
- Basic Thin Film Process for Perovskite Ferroelectric MaterialsMRS Proceedings, 1990
- Magnetic compounds wtth perovskite structure III. ferromagnetic compounds of cobaltPhysica, 1953
- Rochelle Salt as a DielectricPhysical Review B, 1930