CF and CF2 actinometry in a CF4/Ar plasma
- 1 April 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (7), 3186-3192
- https://doi.org/10.1063/1.350961
Abstract
Relative ground state CF and CF2 concentrations have been measured in a 13.56‐MHz rf CF4/Ar discharge using both laser‐induced fluorescence (LIF) and actinometric techniques to assess the validity of actinometry for CF and CF2 over a limited parameter space of pressure and power. Relative measurements of the CF ( A2Σ − X2Π) system and the CF2 ( A1B1 − X1A1) system were made by LIF. Actinometric values were calculated from relative measures of the plasma‐induced emission (PIE) intensity of the CF* ( B2Δ− X2Π) at 202.4 nm, CF2* ( A1B1 − X1A1) at 251.9 nm, and Ar* [4s’(1/2)°−4p’(1/2)] at 750.4 nm. Both LIF and PIE signals were spatially averaged over the bulk of the plasma. Steady‐state actinometric and LIF measurements were compared for CF4/5% Ar discharges at pressures in the range of 500 to 1000 mTorr and nominal powers in the range of 20 to 100 W. Dynamic actinometric and LIF measurements of CF were made by modulating the discharge power and monitoring the CF transient at one set of conditions, 500‐mTorr pressure and 70‐W nominal power. Our results indicate that actinometric measurements of CF and CF2 correlate well with relative CF and CF2 LIF measurements under the studied conditions.Keywords
This publication has 20 references indexed in Scilit:
- Heterogeneous processes in CF4/O2 plasmas probed using laser-induced fluorescence of CF2Journal of Applied Physics, 1990
- Spatially and temporally resolved laser-induced fluorescence measurements of CF2 and CF radicals in a CF4 rf plasmaJournal of Applied Physics, 1989
- Measurements of F*, CF, and CF2 formation and decay in pulsed fluorocarbon dischargesApplied Physics Letters, 1988
- Laser induced fluorescence detection of CF and CF2 radicals in a CF4/O2 plasmaApplied Physics Letters, 1987
- Diagnostics and decomposition mechanism in radio-frequency discharges of fluorocarbons utilized for plasma etching or polymerizationPlasma Chemistry and Plasma Processing, 1982
- Detection of CF2 radicals in a plasma etching reactor by laser-induced fluorescence spectroscopyApplied Physics Letters, 1982
- Difluorocarbene Emission Spectra from Fluorocarbon Plasmas and Its Relationship to Fluorocarbon Polymer FormationJournal of the Electrochemical Society, 1982
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle densityJournal of Applied Physics, 1980
- The plasma oxidation of CF4 in a tubular-alumina fast-flow reactorJournal of Applied Physics, 1979