Diagnostics and decomposition mechanism in radio-frequency discharges of fluorocarbons utilized for plasma etching or polymerization
- 1 September 1982
- journal article
- Published by Springer Science and Business Media LLC in Plasma Chemistry and Plasma Processing
- Vol. 2 (3), 213-231
- https://doi.org/10.1007/bf00566521
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- The design of plasma etchantsPlasma Chemistry and Plasma Processing, 1981
- The use of ?actinometer? gases in optical diagnostics of plasma etching mixtures: SF6-O2Plasma Chemistry and Plasma Processing, 1981
- Dependence of F atom density on pressure and flow rate in CF4 glow discharges as determined by emission spectroscopyJournal of Vacuum Science and Technology, 1981
- Mechanisms of radical production in CF3Cl, CF3Br, and related plasma etching gases: The role of added oxidantsPlasma Chemistry and Plasma Processing, 1981
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Plasma etching of Si and SiO2 in SF6–O2 mixturesJournal of Applied Physics, 1981
- Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle densityJournal of Applied Physics, 1980
- Anisotropic plasma etching of polysiliconJournal of Vacuum Science and Technology, 1980
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975