Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy
- 15 September 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (6), 569-571
- https://doi.org/10.1063/1.94428
Abstract
We report the first epitaxial semiconductor-dielectric-semiconductor (SDS) double heterostructures using the III-V compound semiconductor InP. The samples, InP/CaF2/InP(001) and InP/BaxSr1−xF2/InP(001), were grown by molecular beam epitaxy and have lattice mismatches of −6.9% and +2.0%, respectively. In situ high-energy electron diffraction showed that the initial stage of epitaxy of the InP/fluoride structure, unlike that of the fluoride/InP structure, exhibits pseudomorphism. Analysis of the electrical properties of SDS devices with an insulator thickness of ∼100 Å indicates both Ohmic and trap-assisted tunneling conduction.Keywords
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