Explanation and model for the logarithmic time dependence of p-MOSFET degradation
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (5), 218-220
- https://doi.org/10.1109/55.79562
Abstract
The degradation of p-MOS transistors is shown to proceed logarithmically in time. A simple, analytic degradation model is proposed that fully accounts for this observation. The logarithmic time dependence originates from the logarithmic growth of a region of filled traps from the drain junction towards the source. On this basis, a reliable lifetime extrapolation is performed.<>Keywords
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