Hot-carrier drifts in submicrometer p-channel MOSFET's
- 1 May 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (5), 208-210
- https://doi.org/10.1109/edl.1987.26605
Abstract
Hot-carrier-induced shifts in p-channel MOSFET operating characteristics have been observed down to drain voltages of - 6 V. Cases are discussed in which p-MOSFET's show up to two orders of magnitude larger degradation than corresponding n-MOSFET's. The shifts include current and threshold voltage increases. From dependences on stress gate voltage, stress drain voltage, time, and substrate current, the hot-carrier origin of the shifts is specified in detail.Keywords
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