Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis inn-Type Silicon

Abstract

The carrier concentration and mobility, as determined from the Hall effect, have been analyzed using a computer for a series of $n$-type silicon samples doped with Sb, P, and As. Mobility calculations, performed numerically, were based on the general treatment given by Herring and Vogt. Ionized-impurity scattering was calculated from two theories and compared with experiment. Lattice-scattering parameters for intervalley and accoustic modes were determined from a comparison of the results between theory and experiment, using as many as four intervalley phonons. The conclusions support the earlier work of Long, and a partial explanation of the disagreement with parameters determined from other measurements is suggested. Scattering by neutral impurities is found to be temperature dependent, unlike the theoretical model of Erginsoy.