Growth of CdSxSe1−x thin films by laser evaporation deposition
- 23 May 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (21), 1815-1816
- https://doi.org/10.1063/1.99657
Abstract
Optical quality thin films of CdSxSe1−x were deposited on quartz for various values of x. It was found that these films were polycrystalline in structure, with a high degree of orientation of the c axis. An empirical relationship between the band gap and the lattice constant for the binary system CdS‐CdSe was also obtained.Keywords
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