Electron-hole recombination in reactively sputtered amorphous silicon solar cells
- 1 November 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (9), 721-723
- https://doi.org/10.1063/1.92861
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Effect of hydrogen on the density of gap states in reactively sputtered amorphous siliconPhysical Review B, 1981
- Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous siliconPhysical Review B, 1981
- Electron transport in hydrogenated amorphous silicon: drift mobility and junction capacitanceSolar Cells, 1980
- The influence of carrier generation and collection on short-circuit currents in amorphous silicon solar cellsSolar Cells, 1980
- Optical Studies of Excess Carrier Recombination in-Si: H: Evidence for Dispersive DiffusionPhysical Review Letters, 1980
- Luminescence and ESR studies of defects in hydrogenated amorphous siliconSolid State Communications, 1980
- Optical properties of reactively sputtered a-SiHx filmsJournal of Non-Crystalline Solids, 1980
- Photoinduced Optical Absorption in Amorphous:HPhysical Review Letters, 1979
- Role of gap states in discharge produced a-SiHx in determining carrier transport and recombinationSolar Energy Materials, 1979
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952