Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAs
- 23 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (4), 335-337
- https://doi.org/10.1063/1.100962
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- AlGaAs multiple-wavelength light-emitting bar grown by laser-assisted metalorganic chemical vapor depositionApplied Physics Letters, 1988
- A Growth Analysis for Metalorganic Vapor Phase Epitaxy of GaAsJapanese Journal of Applied Physics, 1988
- Laser-induced homoepitaxial growth of gallium arsenide filmsApplied Physics Letters, 1988
- Direct writing of GaAs monolayers by laser-assisted atomic layer epitaxyApplied Physics Letters, 1988
- Laser-assisted metalorganic molecular beam epitaxy of GaAsApplied Physics Letters, 1988
- The ultraviolet absorpton spectra of selected organometallic compounds used in the chemical vapor deposition of gallium arsenideJournal of Crystal Growth, 1987
- Characteristics of laser metalorganic vapor-phase epitaxy in GaAsJournal of Applied Physics, 1986
- Cadmium deposition on transparent substrates by laser induced dissociation of Cd(CH3)2 at visible wavelengthsApplied Physics A, 1982
- Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beamJournal of Applied Physics, 1980