Recent advances in the organometallic vapor phase epitaxial growth of HgCdTe by the direct alloy growth process
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4), 1-9
- https://doi.org/10.1016/0022-0248(92)90706-o
Abstract
No abstract availableKeywords
This publication has 45 references indexed in Scilit:
- The effect of growth orientation on the morphology, composition, and growth rate of mercury cadmium telluride layers grown by metalorganic vapor phase epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Low temperature MOCVD of Hg1−xCdxTe on 311, 511, 711 and shaped GaAsJournal of Crystal Growth, 1991
- A study of the structure and electrical properties of CdxHg1−xTe grown by metalorganic vapor phase epitaxy (interdiffused multilayer process)Journal of Vacuum Science & Technology A, 1989
- Annealing and electrical properties of organometallic vapor phase epitaxy–interdiffused multilayer process grown HgCdTeJournal of Vacuum Science & Technology A, 1988
- Material characteristics of Hg1−xCdx > Te grown by organometallic vapor phase epitaxyJournal of Crystal Growth, 1988
- Epitaxial Mercury Cadmium TellurideAnnual Review of Materials Science, 1985
- MOCVD growth of CdTe and HgCdTeJournal of Vacuum Science & Technology A, 1985
- Metalorganic growth of high-purity HgCdTe filmsApplied Physics Letters, 1984
- A new MOVPE technique for the growth of highly uniform CMTJournal of Crystal Growth, 1984
- The growth by MOVPE and characterisation of CdxHg1−xTeJournal of Crystal Growth, 1981