Band‐Gap Narrowing in n‐Type Moderately Doped Silicon at 300 K
- 1 June 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 117 (2), 575-584
- https://doi.org/10.1002/pssb.2221170218
Abstract
No abstract availableKeywords
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